Technology Reports of Kansai University (ISSN: 04532198) is a monthly peer-reviewed and open-access international Journal. It was first built in 1959 and officially in 1975 till now by kansai university, japan. The journal covers all sort of engineering topic, mathematics and physics. Technology Reports of Kansai University (TRKU) was closed access journal until 2017. After that TRKU became open access journal. TRKU is a scopus indexed journal and directly run by faculty of engineering, kansai university.
Technology Reports of Kansai University (ISSN: 04532198) is a peer-reviewed journal. The journal covers all sort of engineering topic as well as mathematics and physics. the journal's scopes are
in the following fields but not limited to:
TiO2/Ti electrode preparation has been carried out by anodizing, sol-gel and dip coating methods while tellurium coating has been carried out using the dip coating method to obtain Te-TiO2 / Ti electrodes. Photo current response of TiO2 / Ti and Te-TiO2 / Ti tested on photoelectrocatalyst shows that TiO2 / Ti electrodes are active in UV light and Te-TiO2 / Ti is active in visible light. The results of characterization using XRD showed anatase crystals, SEM showed nano tube crystals against Te-TiO2 / Ti electrodes, EDX confirmed Te on Te-TiO2 / Ti electrodes, with a percentage of 2.48%. Measurement of UV-Vis Diffuse Reflectance Spectroscopy (DRS UV-Vis) was done to determine the band gap energy of the prepared TiO2/ Ti and Te-TiO2 / Ti electrodes, LSV shows that the TiO2 / Ti electrode is active in UV irradiation and the Te-TiO2 / Ti electrode is active in Visible light. The results of the UV-Vis spectrophotometer analysis that degraded the reactive blue 160 compound by photolectrocatalyst showed that the TiO2 / Ti electrode was active with UV light irradiation with a degradation rate constant of 0.0289 minutes-1 and active Te-TiO2 / Ti with visible irradiation with a degradation rate constant of 0.0653 min
Porous silicon layers have been synthesized on n-type (111) silicon wafers by photoelectrochemical etching (PECE) technique with etching durations of 20 and 30 min. The morphological and structural properties of bulk and porous structures were examined by using scanning electron microscopy and X-Ray diffraction, while the electrical properties were investegated by I-Vcharactristics. From SEM images, the porous silicon (PSi) layers have sponge-like structure. XRD spectra of porous silicon showing different diffraction peaks with compressive strain. I-V characteristics showed Schottkybehaviour and small leakage current