Porous silicon layers have been synthesized on n-type (111) silicon wafers by photoelectrochemical etching (PECE) technique with etching durations of 20 and 30 min. The morphological and structural properties of bulk and porous structures were examined by using scanning electron microscopy and X-Ray diffraction, while the electrical properties were investegated by I-V charactristics. From SEM images, the porous silicon (PSi) layers have sponge-like structure. XRD spectra of porous silicon showing different diffraction peaks with compressive strain. I-V characteristics showed Schottky behaviour and small leakage current.